Sample 12

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
0	13	Si wafer - not bonded	50	0	5.0	50	750	120	10	12.0
1	15	Si wafer - not bonded	12	0	2.0	100	750	20	10	12.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 21.864 um
Calculated remaining resist as 7.06um, indicating an erosion of 1.68um in 10 minutes of etching
This equates to an erosion rate of 168 nm/min
The etch depth of 14.80um in 10 mins indicates an etch rate of 1480.0nm/min
The selectivity is therefore 8.83:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	21.864200
Remaining resist (um)	7.064200
Semiconductor etched(um)	14.800000
Etch rate (nm/min)	1480.000000
Erosion rate (nm/min)	167.680000
Selectivity	8.826336